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The NTE74HC40105 is a high-speed silicon gate CMOS device in a 16−Lead DIP-type package that is compatible, except for "shift−out" circuitry, with the NTE40105B. This device is a low−power first−in−out (FIFO) "elastic" storage register that can store 16 4−bit words. The NTE74HC40105 is capable of handling input and output data at different shifting rates. This feature makes it particularly useful as a buffer between asynchronous systems. Each work position in the register is clocked by a control flip−flop, which stores a marker bit. A "1" signifies that the position's data is filled and a "0" denotes a vacancy in that position. The control flip−flop detects the state of the preceding flip−flop and communicates its own status to the succeeding flip−flop. When a control flip−flop is in the "0" state and sees a "1" in the preceding flip−flop, it generates a clock pulse that transfers data from the preceding four data latches into its own four data latches and resets the preceding flip−flop to "0". The first and last control flip−flops have buffered outputs. Since all empty locations "bubble" automatically to the input end, an all valid data ripple through to the output end, the status of the first control flip−flop (DATA−IN READY) indicates if the FIFO is full, and the status of the last flip−flop (DATA−OUT READY) indicates if the FIFO contains data. As the earliest data are removed from the bottom of the data stack (the output end), all data entered later will automatically propagate (ripple) toward the output.
Wide power supply range: 2V to 6V
High-noise immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V
Significant power reduction compared to LS−TTL logic ICs
Applications: Bit−rate smoothing CPU/terminal buffering Data communications
Peripheral buffering Line printer input buffers Auto−dialers
CRT buffer memories
Radar data acquisition
Absolute maximum ratings:* VCC: −0.5 to +7.0V
IIK, IOK: &plusnm;20mA
DC output source or sink current (per output), IOUT: &plusnm;25mA
DC VCC or GND current (per pin), ICC: &plusnm;50mA
Tstg: −65°C to +150°C
TL: +300° C
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* Absolute Maximum Ratings are those values beyond which damage to the device may occur. Unless otherwise specified, all voltages are referenced to GND.