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NTE551 - Silicon Rectifier General Purpose 1.5V/1A

Model:

NTE551

 | Catalog #: 55052235
Price:
$2.76
$2.76
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  • Maximum recurrent peak reverse voltage: 400V
  • Maximum RMS voltage: 280V
  • Maximum DC blocking voltage: 400V
  • Maximum average forward rectified current: 6 amps
  • Peak forward surge current (8.3ms single half sine-wave superimposed on rated load): 300 amps
  • Maximum instantaneous forward voltage: 1.3V
  • Maximum DC reverse current: 10μA
  • Maximum reverse recovery time: 150ns
  • Typical junction capacitance: 300pF
  • Typical thermal resistance, junction to ambient: 10°C/W
  • Operating junction temperature range: -50° to 125°C
  • Storage temperature range: -50° to 150°C

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  • IGT = 10mA
  • RMS on−state current (all conduction angles, TC = +85°C): 12A
  • Average on−state current (half cycle, 180° conduction angle, TC = +85°C): 7.6A
  • Nonrepetitive on−state current (half cycle, 60Hz): 132A
  • Nonrepetitive on−state current (half cycle, 50Hz): 120A
  • Peak gate current (10µs max): 4A
  • Peak gate dissipation (10µs max): 10W
  • Average gate dissipation (20ms max): 1W
  • Operating junction temperature range: -40°C to 125°C
  • Storage temperature range: -40° to 125°C
  • Thermal resistance, junction--to--case: 3K /W
  • Thermal resistance, junction--to--ambient: 60K /W
  • Lead temperature (during soldering, 1.6mm from case, 10 sec. max): 250°C

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  • Low reverse leakage current
  • High current capability and low forward voltage drop
  • Maximum recurrent peak reverse voltage: 100V
  • Maximum RMS voltage: 70V
  • DC blocking voltage: 100V
  • Average forward current: 10A
  • Operating junction temperature range: -55° to +125°C
  • Storage temperature range: --55° to +150°C

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  • Maximum recurrent peak reverse voltage: 600V
  • Maximum RMS voltage: 240V
  • Maximum DC blocking voltage: 600V
  • Maximum average forward rectified current (9.5mm lead length at 75°C): 1 amp
  • Peak forward surge current (8.3ms single half sine--wave superimposed on rated load): 50 amps
  • Maximum instantaneous forward voltage at 1 amp DC: 1.2V
  • Maximum DC reverse current at rated DC blocking voltage: 5μA
  • Maximum full load reverse current, full cycle average (9.5mm lead length at 55°C): 100μA
  • Maximum reverse recovery time: 200ns
  • Typical junction capacitance: 15pF
  • Operating junction and storage temperature range: --65° to 175°C

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  • Reverse voltage: -35V
  • Forward current: 100mA
  • Power dissipation: 150mW
  • Operating temperature range: --20° to 60°C
  • Storage temperature range: --45° to 125°C

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  • Schottky barrier provides stable characteristics by eliminating "cat--whisker" or "S--bend" contact
  • Very low capacitance: 1pF
  • Extremely low minority carrier lifetime: 100ps maximum
  • High reverse voltage: 50V
  • Low reverse leakage current: 200nA maximum
  • Reverse voltage: 50V
  • Forward power dissipation: 400mW (derate above 25°C: 4mW/°C)
  • Operating junction temperature range: --55° to 125°C
  • Storage temperature range: --65° to 150°C

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Product Summary

The NTE551 is a 1.5KV/1A silicon rectifier with a metal case.

  • Maximum ratings & electrical characteristics:
    Maximum peak reverse voltage,VRRM: 1500V
  • Maximum average forward current (TA = +20°C), IF(AV): 1.5A
  • Maximum one-cycle surge forward current (non−repetitive, 50Hz), IFSM: 60A
  • Maximum repetitive peak reverse current (VRRM = rated), IRRM: TJ = +25°C: 10μA
    TJ = +125°C:
  • Maximum one cycle surge forward current (non−repetitive, 50Hz), IFSM: 60A
  • Maximum peak forward voltage (IFM = 2A, TJ = +25°C), VFM: 1.2V
  • Maximum reverse recovery time (IF = 20mA, IR = 1mA, TJ = +25°C), trr: 20μS
  • Maximum forward recovery voltage (IF = 100mA, tr = 100ns, tp = 5μs, TJ = +25°C), Vfr: 5V
  • Operating junction temperature range, TJ: −40° to +125°C
  • Storage temperature range, Tstg: −40° to +150°C
  • Maximum non−repetitive peak reverse voltage,VRSM: 1600V
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