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NTE NTE4012B IC-CMOS Quad 4−Input NAND Gate

Model:

NTE4012B

 | Catalog #: 55050774
Price:
$1.06
$1.06
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  • Schmitt trigger with no external components
  • Hysteresis voltage (Typ): 0.9V at VDD = 5V, 2.3V at VDD = 10V, 3.5V at VDD = 15V
  • Noise immunity greater than 50%
  • No limit on input rise and fall times
  • Standardized, symmetrical output characteristics
  • Maximum input current of 1μA at 18V over full-package temperature range: 100nA at 18V and +25°C
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  • Supply voltage range: 3VDC to 18VDC
  • All outputs buffered
  • Capable of driving two low−power TTL loads or one low−power Schottky TTL load over the rated temp
  • Triple diode protection on all inputs

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  • Supply voltage range: 3VDC to 18VDC
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NTE NTE4012BT IC-CMOS Quad 4−Input NAND Gate
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  • Supply voltage range: 3VDC to 18VDC
  • All outputs buffered
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  • Supply voltage range: 3V to 15V
  • High noise immunity: 0.45VDD Typ
  • Diode protection on all inputs
  • Capable of driving two low-power TTL loads
  • Operating ambient temperature range: −55° to +125°C
  • Storage temperature range: −65° to +150°C
  • 14−Lead DIP

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Product Summary

The NTE4012B (14−Lead DIP) and NTE4012BT (SOIC−14) are quad 4−input NAND gate devices constructed with P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low-power dissipation and/or high-noise immunity is desired.

  • Supply voltage range: 3VDC to 18VDC
  • All outputs buffered
  • Capable of driving two low−power TTL loads or one low−power Schottky TTL load over the rated temp
  • Double diode protection on all inputs
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