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NTE291 PNP Silicon Medium Power Amplifier/Switch 130V IC=4A

Model:

NTE291

 | Catalog #: 55052951
Price:
$4.01
$4.01
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  • Ultralow on-resistance
  • Dynamic dv/dt rating
  • +175°C operating temperature
  • Fast switching
  • Fully avalanche rated
  • ID
    TC = +25°C: 57A
    TC = +100°C: 40A
  • Starting TJ = +25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS = 10V IDM: 230A
  • PD: 200W
    Derate linearly above 25°C: 1.3W/°C
  • VGA: &plusnm;20V
  • IAR: 28A
  • Starting TJ = +25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS = 10V EAR: 20mJ
  • ISD ≤ 28A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS, TJ ≤ +175°C IDT: 5.8V/ns
  • TJ: −55° to +175°C
  • Tstg: −55° to +175°C
  • TL: +300°C
  • RthJC: 0.75°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W

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  • (VGS = 10V, IDGS = 10V), ID:
    TC = +25°C: 162A
    TC = +100°C: 115A
  • IDM: 650A
  • Starting TJ = +25°C, L = 0.12mH, RG = 25Ω, IAS = 95A, EAS: 519mJ
  • IAR: 95A
  • EAR: 20mj
  • ISD ≤ 95A, di/dt ≤ 150A/μs, VDD ≤ V(BR)DSS, TJ ≤ +175°C, dv/dt: 5.0V/ns
  • TJ: −55° to +175°C
  • Tstg: −55° to +175°C
  • TL: +300°C
  • RthJC: 0.75°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W

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NTE292 PNP Silicon Medium Power Amplifier/Switch 130V IC=4A
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  • VCBO: 130V
  • (RBB = 100Ω, VBB = 0), VCEX: 130V
  • VCEO: 120V
  • VEBO: 5V
  • TC ≤ +106°C, IC: 4A
  • TC ≤ +130°C, IB: 2A
  • Topr: --65° to +150°C
  • Tstg: --65° to +150°C
  • TL: at distance ≥ 1/8 in. (3.17mm) from case for 10s max: +235°C
  • RthJC: 3.125°C/W
  • RthJA: 70°C/W

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  • Low on--state resistance: RDS(on) = 1.1Ω max (VGS = 10V, ID = 3A)
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  • High avalanche capability ratings
  • Isolated TO220-type package

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  • Advanced process technology
  • Ultralow on−state resistance
  • Dynamic dv/dt rating
  • +175°C operating temperature
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  • Dynamic dv/dt rating
  • Logic level gate drive
  • RDS(on) specified at VGS = 4V & 5V
  • +175°C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

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Product Summary

The NTE291 (NPN) and NTE292 (PNP) are general purpose medium--power silicon complementary transistors in a TO220-type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high--fidelity amplifiers.

  • VCBO: 130V
  • (RBB = 100Ω, VBB = 0), VCEX: 130V
  • VCEO: 120V
  • VEBO: 5V
  • TC ≤ +106°C, IC: 4A
  • TC ≤ +130°C, IB: 2A
  • Topr: --65° to +150°C
  • Tstg: --65° to +150°C
  • TL: at distance ≥ 1/8 in. (3.17mm) from case for 10s max: +235°C
  • RthJC: 3.125°C/W
  • RthJA: 70°C/W
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