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NTE2909 N-Channel Enhancement Mode High-Speed Switch

Model:

NTE2909

 | Catalog #: 55052950
Price:
$2.99
$2.99
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  • VCBO: 130V
  • (RBB = 100Ω, VBB = 0), VCEX: 130V
  • VCEO: 120V
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  • TC ≤ +106°C, IC: 4A
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  • Tstg: --65° to +150°C
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Product Summary

The NTE2909 is a power MOSFET in a TO220-type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

  • Ultralow on-resistance
  • Dynamic dv/dt rating
  • +175°C operating temperature
  • Fast switching
  • Fully avalanche rated
  • ID
    TC = +25°C: 57A
    TC = +100°C: 40A
  • Starting TJ = +25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS = 10V IDM: 230A
  • PD: 200W
    Derate linearly above 25°C: 1.3W/°C
  • VGA: ±20V
  • IAR: 28A
  • Starting TJ = +25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS = 10V EAR: 20mJ
  • ISD ≤ 28A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS, TJ ≤ +175°C IDT: 5.8V/ns
  • TJ: −55° to +175°C
  • Tstg: −55° to +175°C
  • TL: +300°C
  • RthJC: 0.75°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W
Pricing and availability: Please note that all prices are subject to change without prior notice. Prices advertised on this site are for online orders only. Prices on some items may differ from those advertised in RadioShack stores. All merchandise may not be available at all stores, and all stores may not participate in all sales promotions. We recommend you contact the store to confirm product availability and price.

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