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NTE2900 MOSFET N-Channel Enhancement Mode High-Speed Switch

Model:

NTE2900

 | Catalog #: 55052947
Price:
$2.61
$2.61
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  • Forward current transfer ratio: hFE = 90,000 minimum
  • Free−air power dissipation: 1.33W @ TA = +50°C
  • Hard solder mountdown
  • Applications include driver, regulator, audio output, relay substitute and more

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  • Low collector-emitter saturation voltage: VCE(sat) = 1.5V Max @ IC = 1.5A
  • TO202-type package: 2W free-air dissipation @ TA = +25°C
  • Absolute Maximum Ratings
    VCEO: 50V
  • VCES: 50V
  • VEBO: 13V
  • IC
    Continuous: 2A
    Peak (pulse width ≤ 25ms, duty cycle ≤ 50%): 3A
  • IB: 100mA
  • TA = +25°C, PD: 1.67W
    Derate above 25°C*: 13.3mW/°C
  • TC = +25°C, PD: 10W
    Derate above 25°C: 80mW/°C
  • TJ: -55° to +150°C
  • Tstg: -55° to +150°C
  • RthJA: 75°C/W
  • RthJC: 12.5°C/W

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  • Low collector-emitter saturation voltage: VCE(sat) = 1.5V Max @ IC = 1.5A
  • TO202-type package: 2W free-air dissipation @ TA = +25°C
  • Absolute Maximum Ratings
    VCEO: 50V
  • VCES: 50V
  • VEBO: 13V
  • IC
    Continuous: 2A
    Peak (pulse width ≤ 25ms, duty cycle ≤ 50%): 3A
  • IB: 100mA
  • TA = +25°C, PD: 1.67W
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  • TC = +25°C, PD: 10W
    Derate above 25°C: 80mW/°C
  • TJ: -55° to +150°C
  • Tstg: -55° to +150°C
  • RthJA: 75°C/W
  • RthJC: 12.5°C/W

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  • Absolute Maximum Ratings
    VCEO: 20V
  • VCBO: 40V
  • VEBO: 3V
  • IC: 400mA
  • IB: 400mA
  • TC = +75°C, PD: 2.5W
    Derate above 25°C: 20mW/°C
  • TA = +25°C, PD: 1W
  • Tstg: --65° to +200°C

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  • Absolute Maximum Ratings
    VCEO: 325V
  • VCES: 800V
  • VEBO: 8V
  • IC
    Continuous: 10A
    Peak (tp ≤ 10ms): 15A
  • IB: 3A
  • TC ≤ +25°C, Ptot: 100W
  • TJ: +200°C
  • Tstg: --65° to +200°C
  • RthJC: 1.75° C/W

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  • Absolute Maximum Ratings (TA = +25°C unless specified)
    VCBO: 180V
  • VCEO: 180V
  • VEBO: 5V
  • IC: 16A
  • IE: 16A
  • PC: 150W
  • TJ: +150°C
  • Tstg: --65°C to +150°C

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Product Summary

The NTE2900 is a MOSFET N-channel enhancement mode 250V, ID=14A, TO-220 case high-speed switching transistor.

  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Absolute Maximum Ratings
    VGS = 10V, ID
    TC = +25°C: 14A
    TC = +100°C: 8.5A
  • IDM: 56A
  • TC = +25°C, PD: 125W
    Derate linearly above 25°C: 1.0W/°C
  • VGS: &plusnm;20
  • EAS (VDD = 25V, starting TJ = +25°C, L = 4.5mH, RG = 25Ω, IAS = 14A): 550mJ
  • IAR: 14A
  • ISD ≤ 14A, di/dt ≤ 150A/μs, VDD ≤ 250V, TJ ≤ +175°C dv/dt: 4.8V/ns
  • TJ: --55° to +175°C
  • Tstg: --55° to +175°C
  • During Soldering, 1.6mm from case for 10sec, TL: +300°C
  • RthJC: 1.0°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W
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