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NTE242 Silicon Audio Power Amplifier/Switch 80V IC=4A

Model:

NTE242

 | Catalog #: 55052921
Price:
$2.90
$2.90
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NTE241 NPN Silicon Audio Power Amplifier, Switch
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  • Absolute Maximum Ratings
    VCEO: 80V
  • VCB: 80V
  • VEB: 5V
  • IC: 4A
  • IB: 1A
  • TC = +25°C, PD: 60W
    Derate above 25°C: 320mW/°C
  • TJ: --65° to +150°C
  • Tstg: --65° to +150°C
  • RΘJC: 3.12°C/W

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  • High DC-current gain: hFE = 3000 Typ @ IC = 4A
  • Collector--emitter sustaining voltage: VCEO(sus) = 80V Min @ 100mA
  • VCE(sat) = 2V max @ IC = 4A
    VCE(at) = 3V max @ IC = 8A
  • Monolithic construction with built--in base--emitter shunt resistors

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  • High DC Current Gain: hFE = 3000 Typ @ IC = 4A
  • Collector--Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
  • Low Collector--Emitter Saturation Voltage
    VCE(sat) = 2V Max @ IC = 4A; = 3V Max @ IC = 8A
  • Monolithic Construction with Built--In Base--Emitter Shunt Resistors
  • Absolute Maximum Ratings
    VCEO: 80V
  • VCB: 80V
  • VEB: 5V
  • IC continuous: 8A
    IC peak: 16A
  • IB: 120mA
  • TC = +25°C, PD: 100W
    Derate above 25°C: 0.571W/°C
  • TJ: --65° to +200°C
  • Tstg: --65° to +200°C
  • RthJC: 1.78°C/W

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  • High DC current gain: hFE = 4000 Typ @ IC = 5A
  • Monolithic construction with built--in base--emitter shunt resistors

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  • High DC current gain: hFE = 3500 typ @ IC = 5A
  • Collector--emitter sustaining voltage: VCEO(sus) = 100V min @ 100mA
  • Monolithic construction with built--in base--emitter shunt resistors
  • Absolute Maximum Ratings
    VCEO: 100V
  • VCB: 100V
  • VEB: 5V
  • IC continuous: 12A
    IC peak: 120A
  • IB: 200mA
  • TC = +25°C, PD: 150W
    Derate above 25°C: 0.857W/°C
  • TJ: --65° to +200°C
  • Tstg: --65° to +200°C
  • RthJC: 1.17°C/W

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Availability:

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Product Summary

The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220-type package designed for use in power amplifier and switching circuits.

  • Absolute Maximum Ratings
    VCEO: 80V
  • VCB: 80V
  • VEB: 5V
  • IC: 4A
  • IB: 1A
  • TC = +25°C, PD: 60W
    Derate above 25°C: 320mW/°C
  • TJ: --65° to +150°C
  • Tstg: --65° to +150°C
  • RΘJC: 3.12°C/W
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