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NTE346 RF Power Transistor

Model:

NTE346

 | Catalog #: 55052979
Sale Price:
$2.08
You save:
$2.72 (57%)
 
Valid until: 08/13/14
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  • VCBO: 100V
  • VCEO: 100V
  • VBEO: 5V
  • IE: 15A
  • IC: 15A
  • IB: 5A
  • (TC ≤ +25°C), PD: 90W
  • TJ: +150°C
  • Tstg: --65° to +150°C
  • RthJC: 1.4°C/W max

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  • VCEO: 100V
  • VBEO: 5V
  • IE: 15A
  • IC: 15A
  • IB: 5A
  • TC ≤ +25°C), PD: 90W
  • TJ: +150°C
  • Tstg: --65° to +150°C
  • RthJC: 1.4°C/W max

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  • VCBO: 120V
  • VCEO: 120V
  • VEBO: 4V
  • IC: 1A
  • IB: 500mA
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    TC = +25°C: 10W
    TA = +25°C: 1W
  • TJ: +200°C
  • Tstg: --65° to +200°C
  • RthJC: 17.4°C/W
  • RthJA: 175°C/W

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  • IF: 50mA
  • IFM: 1A
  • VR: 6V
  • PD: 70mW
  • VCEO: 35V
  • VECO: 6V
  • IC: 50mA
  • PC: 150mW
  • VISO: 5000Vrms
  • Ptot: 200mW
  • Topr: --30° to +100°C
  • Tstg: --55° to +125°C
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  • Absolute Maximum Ratings - TA = +25°C unless specified
    VCBO: 50V
  • VCEO: 40V
  • VEBO: 5V
  • IC: 1.5A
  • TC = +25°C, PC: 7W
  • TJ: +150°C
  • Tstg: -55° to +150°C

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  • Infrared emitting diode
    VR: 3V
  • IF: 60mA
  • TA = +25°C, PD: 100mW
    Derate above 25°C: 1.33mW/°C
  • Output driver
    VDRM: 400V
  • ITSM: 1.0A
  • TA = +25°C, PD: 300mW
    Derate above 25°C: 4.0mW/°C
  • Total device
    VISO: 7500V
  • TA = +25°C, PD: 330mW
    Derate above 25°C: 4.4mW/°C
  • TJ: --40° to +100°C
  • TA: --40° to +85°C
  • Tstg: --40° to +150°C
  • TL: +260°C

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Product Summary

The NTE346 is a silicon NPN transistor in a TO39-type package designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as output driver or pre−driver stages, in VHF and UHF equipment.

  • Current−gain bandwidth product−fT = 500MHz (min) @ IC = 50mAdc
  • Power gain−Gpe = 10dB (Min) @ VCE = 12Vdc
  • 1-watt minimum power output @ f = 175MHz
  • Multiple emitter construction for excellent high−frequency performance
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