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NTE3041 Optoisolator with NPN Transistor

Model:

NTE3041

 | Catalog #: 55052966
Price:
$2.43
$2.43
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Sale Price:
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0

  • Input LED
    VR: 3V
  • IF
    Continuous: 60mA
    Peak (1μs p.w. 300 pps): 3A
  • PD: 100mW
    Derate above 25°C: 1.33mW/°C
  • Output Transistor
    VCEO: 30V
  • VECO: 7V
  • VCBO: 70V
  • PD: 100mW
    Derate above 25°C: 2.0mW/°C
  • Total Device
    VISO: ±1500V
  • PD: 250mW
    Derate above 25°C: 3.3mW/°C
  • TA: --55° to +100°C
  • Tstg: --55° to +150°C
  • TL: +260°C

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  • IC = 0.8A
  • TO-92
  • 1W audio power amplifier applications
  • Collector-base voltage: 35V
  • Collector-emitter voltage: 30V
  • Emitter-base voltage: 5V
  • Collector current: 800mA
  • Emitter current: 800mA
  • Collector power dissipation: 600mW
  • Operating junction temperature: 150°C
  • Storage temperature range: -55° to 150°C

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  • Input LED
    VR: 3V
  • IF: 60mA
  • TA = +25°C, PD: 120mW
    Derate above 25°C: 1.41mW/°C
  • Output Detector
    VCEO: 80V
  • VECO: 5V
  • TA = +25°C, PD: 150mWDerate above 25°C: 1.76mW/°C
  • Total Device
    VISO: 7500V
  • TA = +25°C, PD: 250mW
    Derate above 25°C: 2.94mW/°C
  • TA: --55° to +100°C
  • Tstg: --55° to +150°C
  • TL: +260°C

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  • Input LED
    VR: 3V
  • IF: 60mA
  • TA = +25°C* PD: 120mW
    Derate above 25°C: 1.41mW/°C
  • Output Detector
    VCEO: 80V
  • VECO: 5V
  • TA = +25°C** PD: 150mW:
    Derate above 25°C: 1.76mW/°C
  • Total Device
    ***VISO: 7500V
  • TA = +25°C, PD: 250mW
    Derate above 25°C: 2.94mW/°C
  • TA: --55° to +100°C
  • Tstg: --55° to +150°C
  • TL: +260°C

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  • LED (GaAs diode)
    Reverse voltage: 3V
  • Forward current
    Continuous: 60mA
    Peak (50μs pulse, 120 pps): 500mA
  • Power Dissipation (TA = +25°C): 90mW
    Derate linearly above 25°C: 1.2mW/°C
  • Detector (photo SCR)
    DC anode current: 100mA
  • Peak pulse current (100μs pulse, 120 pps): 1.0A
  • Average gate current: 25mA
  • Reverse gate current: 1.0mA
  • Anode voltage (DC or peak AC): 400V
  • Power dissipation (TA = +25°C): 200mW
    Derate linearly above 25°C: 2.67mW/°C
  • Total device
    Isolation surge voltage: 3550V
  • Power dissipation (TA = +25°C): 250mW
    Derate linearly Above 25°C: 3.3mW/°C
  • Operating temperature range: --30° to +100°C
  • Storage temperature range: --55° to +150°C
  • Lead temperature (during soldering for 7 sec): +260°C

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  • Infrared emitting diode
    VR: 3V
  • IF: 60mA
  • TA = +25°C, PD: 100mW
    Derate above 25°C: 1.33mW/°C
  • Output driver
    VDRM: 250V
  • PW = 1ms, 120pps), ITSM: 1A
  • TA = +25°C, PD: 300mW
    Derate above 25°C: 4mW/°C
  • Total device
    VISO: 7500VAC
  • TA = +25°C, PD: 330mW
    Derate above 25°C: 4.4mW/°C
  • TJ: --40° to +100°C
  • TA: --40° to +85°C
  • Tstg: --40° to +150°C
  • TL: +260°C

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Product Summary

The NTE3041 is an optoisolator in a 6--lead DIP-type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

  • Input LEDVR: 6V
  • IF: 60mA
  • PD: 120mW
  • Output Transistor
  • VCEO: 30V
  • VCBO: 7V
  • VEBO: 70V
  • IC: 150mA
  • PD: 150mW
    Derate above 25°C: 1.76mW/°C
  • Total Device
    VISO: 7500V
  • PD: 250mW
    Derate above 25°C: 2.94mW/°C
  • TA: --55° to +100°C
  • Tstg: --55° to +150°C
  • TL: +260°C
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