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NTE385 Silicon NPN Transistor Audio Power Amp, Switch

Model:

NTE385

 | Catalog #: 55052985
Price:
$11.53
$11.53
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  • VCEO(sus): 400V
  • VCEV: 700V
  • VEBO: 9V
  • Collector current, IC
    Continuous: 12A
    Peak (pulse width = 5ms, duty cycle ≤ 10%): 24A
  • Base current IB
    Continuous: 6A
    Peak (pulse width = 5ms, duty cycle ≤ 10%): 12A
  • Emitter current IE
    Continuous: 18A
    Peak (pulse width = 5ms, duty cycle ≤ 10%): 36A
  • TA = +25°C, PD: 2W
    Derate above 25°C: 16mW/°C
  • TC = +25°C, PD: 100W
    Derate above 25°C: 800mW/°C
  • TJ: --65° to +150°C
  • Tstg: --65° to +150°C
  • RthJC: 1.25°C/W
  • RthJA: 62.5°C/W
  • TL: +275°C

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  • Low collector--emitter saturation voltage: VCE(sat) = 1V max @ 8A
  • VCEO: 80V
  • VEB: 5V
  • Collector current, IC:
    Continuous: 10A
    Peak (pulse width ≤ 6ms, duty cycle ≤ 50%): 20A
  • Total power dissipation, PD:
    TC = +25°C: 50W
    TA = +25°C: 1.67W
  • TJ: --55° to +150°C
  • Tstg: --55° to +150°C
  • RΘJC: 2.5°C/W
  • RΘJA: 75°C/W
  • TL: +275°C

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  • Low Collector--Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A
  • Fast switching speeds
  • Complementary pairs simplify designs
  • Absolute Maximum Ratings Below
  • VCEO: 80V
  • VEB: 5V
  • IC continuous: 10A, peak: 20A
  • PD (TC = +25°C): 50W
    PD (TA = +25°C): 1.67W
  • TJ: 1.67W
  • Tstg: --55° to +150°C
  • RΘJC: 2.5°C/W
  • RΘJA: 75°C/W
  • TL: +275°C

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  • VCBO: 300V
  • VCEO: 300V
  • VEBO: 5V
  • IC: 200mA
  • PC: 15W
  • TJ: +150°C
  • Tstg: --45° to +150°C

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  • VCBO: 200V
  • VCEO: 150V
  • VEBO: 6V
  • Collector current, IC
    Continuous: 2A
    Peak: 10A
  • TA = +25°C, PC: 1.75W
  • TC = +25°C, PC: 25W
  • TJ: +150°C
  • Tstg: --40° to +150°

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  • Current−gain bandwidth product−fT = 500MHz (min) @ IC = 50mAdc
  • Power gain−Gpe = 10dB (Min) @ VCE = 12Vdc
  • 1-watt minimum power output @ f = 175MHz
  • Multiple emitter construction for excellent high−frequency performance

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Product Summary

The NTE385 is a silicon NPN transistor in a TO3-type package designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications.

  • VCEO(sus): 400V
  • (VBE = --1.5V), VCEX: 850V
  • VEB: 7V
  • Collector current, IC
    Continuous: 5A
    Peak (pulse width = 5ms, duty cycle ≤ 10%): 20A
  • PD (TC = +25°C): 175W
    Derate above 25°C: 1.0W/°C
    (TC = +100°C): 100W
  • TJ: --65° to +200°C
  • Tstg: --65° to +200°C
  • RthJC: 1.0°C/W
  • TL: +275°C
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