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NTE331 Audio Power Amplifier Switch

Model:

NTE331

 | Catalog #: 55052977
Price:
$4.21
$4.21
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  • VCBO: 120V
  • VCEO: 120V
  • VEBO: 4V
  • IC: 1A
  • IB: 500mA
  • Ptot
    TC = +25°C: 10W
    TA = +25°C: 1W
  • TJ: +200°C
  • Tstg: --65° to +200°C
  • RthJC: 17.4°C/W
  • RthJA: 175°C/W

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  • IF: 50mA
  • IFM: 1A
  • VR: 6V
  • PD: 70mW
  • VCEO: 35V
  • VECO: 6V
  • IC: 50mA
  • PC: 150mW
  • VISO: 5000Vrms
  • Ptot: 200mW
  • Topr: --30° to +100°C
  • Tstg: --55° to +125°C
  • TL: +260°C

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  • Absolute Maximum Ratings - TA = +25°C unless specified
    VCBO: 50V
  • VCEO: 40V
  • VEBO: 5V
  • IC: 1.5A
  • TC = +25°C, PC: 7W
  • TJ: +150°C
  • Tstg: -55° to +150°C

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  • Infrared emitting diode
    VR: 3V
  • IF: 60mA
  • TA = +25°C, PD: 100mW
    Derate above 25°C: 1.33mW/°C
  • Output driver
    VDRM: 400V
  • ITSM: 1.0A
  • TA = +25°C, PD: 300mW
    Derate above 25°C: 4.0mW/°C
  • Total device
    VISO: 7500V
  • TA = +25°C, PD: 330mW
    Derate above 25°C: 4.4mW/°C
  • TJ: --40° to +100°C
  • TA: --40° to +85°C
  • Tstg: --40° to +150°C
  • TL: +260°C

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  • Infrared emitting diode
    VR: 3V
  • IF: 60mA
  • TA = +25°C, PD: 100mW
    Derate above 25°C: 1.33mW/°C
  • Output driver
    VDRM: 250V
  • PW = 1ms, 120pps), ITSM: 1A
  • TA = +25°C, PD: 300mW
    Derate above 25°C: 4mW/°C
  • Total device
    VISO: 7500VAC
  • TA = +25°C, PD: 330mW
    Derate above 25°C: 4.4mW/°C
  • TJ: --40° to +100°C
  • TA: --40° to +85°C
  • Tstg: --40° to +150°C
  • TL: +260°C

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  • LED (GaAs diode)
    Reverse voltage: 3V
  • Forward current
    Continuous: 60mA
    Peak (50μs pulse, 120 pps): 500mA
  • Power Dissipation (TA = +25°C): 90mW
    Derate linearly above 25°C: 1.2mW/°C
  • Detector (photo SCR)
    DC anode current: 100mA
  • Peak pulse current (100μs pulse, 120 pps): 1.0A
  • Average gate current: 25mA
  • Reverse gate current: 1.0mA
  • Anode voltage (DC or peak AC): 400V
  • Power dissipation (TA = +25°C): 200mW
    Derate linearly above 25°C: 2.67mW/°C
  • Total device
    Isolation surge voltage: 3550V
  • Power dissipation (TA = +25°C): 250mW
    Derate linearly Above 25°C: 3.3mW/°C
  • Operating temperature range: --30° to +100°C
  • Storage temperature range: --55° to +150°C
  • Lead temperature (during soldering for 7 sec): +260°C

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Product Summary

The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial--base complementary power transistors in a TO--220 plastic package intended for use in power linear and switching applications.

  • VCBO: 100V
  • VCEO: 100V
  • VBEO: 5V
  • IE: 15A
  • IC: 15A
  • IB: 5A
  • TC ≤ +25°C), PD: 90W
  • TJ: +150°C
  • Tstg: --65° to +150°C
  • RthJC: 1.4°C/W max
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