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The NTE4501 is a triple-gate (dual 4−input NAND gate, 2−input NOR/OR gate and 8−input AND/NAND) gate device in a 16−lead DIP-type package constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low-power dissipation and/or high-noise immunity is desired.
VDD = −0.5 to +18.0V
Vin = −0.5 to VDD to +0.5V
I = 10mA
TA = −55° to +125°C
Tstg = −65° to +150°C
Above are maximum ratings - those values beyond which damage to the device may occur
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