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The NTE4082B is a dual 4−input AND gate device in a 14−lead DIP-type package constructed with P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low-power dissipation and/or high-noise immunity is desired.
VDD = −0.5 to +18.0V
Vin = −0.5 to VDD to +0.5V
Vout = −0.5 to VDD to +0.5V
Iin = ±10mA
Iout = ±10mA
PD = 500mW Temperature derating (from +65° to +125°C) = −7.0mW/°C
Tstg = −65° to +150°C
TL = +260°C
Above are maximum ratings, those values beyond which damage to the device may occur
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