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The NTE66 is a TMOS Power FET in a TO220-type package designed for high-voltage, high-speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features include lower RDS(ON), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area
and improved high-temperature reliability.
(TJ = +25°C to +150°C), VDSS = 100V
(RGS = 1MΩ, TJ = +25°C to +125°C), VDGR = 100V
VGA = &plusnm;20V
ID TC = +25°C = 14A TC = +100°C = 10A
IDM = 56A Repetitive rating: Pulse width limited by max, junction temperature
IGM = &plusnm;1.5A
EAS = 69mJ L = 0.53mH, Vdd = 25V, RG = 25Ω, Starting TJ = +25°C
Above are maximum ratings - to exceed may damage the device
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