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NTE6401 Unijunction Transistor

Model:

NTE6401

 | Catalog #: 55053100
Price:
$10.44
$10.44
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  • Gate--cathode forward voltage: +40V
  • Gate--cathode reverse voltage: -5V
  • Gate--anode reverse voltage: +40V
  • Anode--cathode voltage: &plusnm;40V
  • DC anode current*: 150mA
  • Peak anode, recurrent forward current
  • Pulse width = 100μs, duty cycle = 1%: 1A
  • Pulse width = 20μs, duty cycle = 1%: 2A
  • Peak anode, non--recurrent forward current (10μs): &plusnm;20mA
  • Capacitive discharge energy**: 250μJ
  • Total average power*: 300mW
  • Operating ambient temperature range*: --50° to +100°C

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  • VCEO = 15V
  • VCBO = 20V
  • VEBO = 3V
  • IC = 30mA
  • (TA = +60°C), PD = 180mW
    Derate above 60°C = 2.0mW/°C
  • Derate above 60°C
  • Tstg = --65° to +150°C
  • RthJA = 500°C/W
  • Above ratings are maximum values which if exceeded may cause damage to the device

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  • (TJ = +25°C to +150°C), VDSS = 100V
  • (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR = 100V
  • VGA = &plusnm;20V
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    TC = +25°C = 14A
    TC = +100°C = 10A
  • IDM = 56A
    Repetitive rating: Pulse width limited by max, junction temperature
  • IGM = &plusnm;1.5A
  • EAS = 69mJ
    L = 0.53mH, Vdd = 25V, RG = 25Ω, Starting TJ = +25°C
  • (TC = +25°C), PD = 77W
    Derate above 25°C = 0.62W/°C
  • TJ = --55° to +150°C
  • Tstg = --55° to +150°C
  • TL = +300°C
  • RΘJC = +300°C
  • RΘJA = 80K/W
  • RΘCS = 0.5K/W
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  • High speed: 8.0ns (Typ)
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  • High impedance PNP inputs assure minimal loading of the Bus

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Availability:

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Product Summary

The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

  • Low peak point current: 5μA (Max)
  • Low emitter reverse current: .005μA (Typ)
  • Passivated surface for reliability and uniformity
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