NTE5679 TRIAC-600VRM 35A

The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls and static switching relays. The triggering signal is normally applied between the gate and MT1.

• Repetitive peak blocking voltage*, VDRM: 600V
• RMS on−state current (conduction angle of 360°, TC = 0° to +125°C), IT(RMS): 40A
• Peak off−state current (VDRM = 600V, gate open*), IDRM
  TC = +25°C: 200mA
  TC = +125°C: 5mA
• Peak one−cycle surge current, ITSM
  50Hz: 335A
  60Hz:400A
• Non−repetitive RMS surge on−state current for fusing (IGT = 500mA, 8.3ms), I2t: 664A2sec
• Maximum DC gate trigger current (VD = 12V, Quad I, II, III), IGT: 100mA
• Maximum DC gate trigger voltage (VD = 12V, Quad I, II, III*), VGT
• TC = +25°C: 2.5V
  TC = +125°C: 0.2V
• Peak on−state voltage (IT(RMS) = 40A, TC = +25°C*), VTM: 1.8V
• DC holding current (*gate Open***), IH: 120mA
• Peak gate trigger current (pulse width ≤ 10μs), IGTM: 4A
• Peak gate power dissipation (pulse width ≤ 10μs), PGM: 40W
• Average gate power dissipation, PG(AV): 800mW
• Minimum critical rate of rise of off−state voltage (VDRM = 600V, gate open*), dv/dt
• TC = +100°C: 375V/μs
  TC = +125°C: 250V/μs
• Minimum critical rate of rise of commutation voltage*, dv/dt(c)
• (VDRM = 600V, IT(RMS) = 40A, commutating di/dt = 21.6A/msec, gate unenergized) 4V/μs
• Maximum rate of change of on−state current (IGT = 200mA, rise time = 0.1μs), di/dt 150A/μs
• Maximum gate controlled turn−on time (IGT = 500mA, rise time = 0.1μs), tgt: 5μs
• Operating temperature range, TJ: 0° to +125°C
• Storage temperature range, Tstg: −20° to +125°C

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