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The NTE2388 is an N--channel enhancement mode power MOSFET in a TO-220
package designed for low-voltage, high-speed power switching applications such as switching regulators, converters, solenoids and relay drivers.
Silicon gate for fast switching speeds
Low rDS(on) to minimize on losses - specified at elevated temperatures
Rugged -- SOA is power dissipation limited
Source--to--drain diode characterized for use with inductive loads
Total power dissipation (TC = +25°C), PD: 125W Derate above 25°C: 1W/°C
Maximum operating junction temperature range, TJ: --55° to +150°C
Storage temperature range, Tstg: --55° to +150°C
Maximum thermal resistance, junction--to--case, RthJC: 1°C/W
Maximum thermal resistance, junction--to--ambient, RthJA: 62.5°C/W
Maximum lead temperature (during soldering, 1/8" from case for 5sec), TL: +300°C
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