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NTE2380 500V N-Channel TMOS Power FET

Model:

NTE2380

 | Catalog #: 55052908
Price:
$7.65
$7.65
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Product Summary

The NTE2380 (N--Ch) is a TMOS power FET in a TO-220 package designed for high-voltage, high-speed power switching applications such as switching regulators, converters, solenoids and relay drivers.

  • Silicon gate for fast switching speeds
  • Rugged -- SOA is power dissipation limited
  • Source--to--drain diode characterized for use with inductive loads
  • Drain source voltage, VDSS: 500V
  • Drain gate voltage (RGS = 1MΩ), VDGR: 500V
  • Gate source voltage, VGS: &plusnm;20V
  • Drain current, ID:
    Continuous: 2.5A
    Pulsed: 10A
  • Total power dissipation (TC = +25°C), PD: 40W
    Derate Above 25°C: 0.32W/°C
  • Operating temperature range, Topr: --55° to +150°C
  • Storage temperature range, Tstg: --55° to +150°C
  • Thermal resistance, junction--to--ambient, RthJA: 62.5°C/W
  • Thermal resistance, junction--to--case, RthJC: 3.12°C/W
  • Maximum lead temperature (during soldering, 1/8" from case, 5sec), TL: +300°C
  • TC = +25°C unless otherwise specified
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