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The NTE2333 is a silicon NPN power transistor in a TO-220 package designed for use in 220V line--operated switch mode power supplies and electronic light ballasts. It features improved efficiency due to low base drive requirements: High and flat DC current gain hFE, fast switching and no coil required in base circuit for turn--off.
Collector--emitter sustaining voltage, VCEO: 450V
Collector--emitter breakdown voltage, VCES: 1000V
Emitter--base voltage, VEBO: 9V
Collector current, IC: Continuous: 6A Peak*: 15A
Base current, IB: Continuous: 4A Peak*: 8A
Total power dissipation (TC = +25°C), PD: 100W Derate above 25°C: 0.8W/°C
Junction temperature, TJ: +150°
Storage temperature range, Tstg: --65° to +150°C
Maximum thermal resistance, junction--to--case, RthJC: 1.25°C/W
Maximum thermal resistance, junction--to--ambient, RthJA: 62.5°C/W
Maximum lead temperature (during soldering, 1/8" from case for 5sec), TL: +260°C
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* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
** Proper strike and creepage distance must be provided