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The NTE2321 is a general purpose NPN quad silicon transistor.
Collector--emitter voltage, VCEO: 30V
Collector--base voltage, VCBO: 60V
Emitter--base voltage, VEBO: 5V
Continuous collector current, IC: 500mA
Total device dissipation (TA = +25°C, each transistor), PD: 0.65W Derate above 25°C: 5.2mW/°C
Total device dissipation (TA = +25°C, total device), PD: 1.9W Derate above 25°C: 15.2mW/°C
Operating junction temperature range, TJ: --65° to +200°C
Storage temperature range, Tstg: --65° to +200°C
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