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NTE2303 Silicon NPN Transistor Horizontal Deflection

Model:

NTE2303

 | Catalog #: 55052894
Price:
$4.89
$4.89
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  • Collector emitter voltage, VCEO(sus) 450V
  • Collector emitter voltage, VCES 1000V
  • Emitter--base voltage, VEBO 5V
  • Collector current, IC
    Continuous 2A
    Peak* 3A
  • Base current, IB
    Continuous 0.75A
    Peak* 1A
  • Peak reverse base current, --IBM 1A
  • Total power dissipation (TC = +25°C), Ptot 50W,br>Derate above 25°C 400mW/°C
  • Operating junction temperature range, TJ --65° to +150°C
  • Storage temperature range, Tstg --65° to +150°C
  • Thermal resistance, junction--to--case, RthJC 2.5°C/W
  • Thermal resistance, junction--to--ambient, RthJA 62.5°C/W
  • Lead temperature (During Soldering, 1/8" from case, 5sec), TL +275°C

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  • Collector--emitter voltage, VCEO: 30V
  • Collector--base voltage, VCBO: 60V
  • Emitter--base voltage, VEBO: 5V
  • Continuous collector current, IC: 500mA
  • Total device dissipation (TA = +25°C, each transistor), PD: 0.65W
    Derate above 25°C: 5.2mW/°C
  • Total device dissipation (TA = +25°C, total device), PD: 1.9W
    Derate above 25°C: 15.2mW/°C
  • Operating junction temperature range, TJ: --65° to +200°C
  • Storage temperature range, Tstg: --65° to +200°C

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  • Collector--emitter voltage, VCEO: 40V
  • Collector--base voltage, VCBO: 60V
  • Emitter--base voltage, VEBO: 5V
  • Continuous collector current, IC: 600mA
  • Total device dissipation (TA = +25°C, each transistor), PD: 0.65W
    Derate above 25°C: 6.5mW/°C
  • Total device dissipation (TA = +25°C, total device), PD: 1.9W
    Derate above 25°C: 19mW/°C
  • Operating junction temperature range, TJ: --55° to +125°C
  • Storage temperature range, Tstg: --55° to +125°C
  • Thermal resistance, junction--to--ambient, RthJA: 66°C/W

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Product Summary

The NTE2303 is a silicon NPN transistor in a TO-220 type package designed for use in small screen black and white deflection circuits.

  • Collector emitter voltage: VCEX = 1500V
  • Glassivated base collector junction
  • Switching times with inductive loads: tf = 0.65μs (Typ) @ IC = 2A
  • Collector emitter voltage, VCEO(sus) 750V
  • Collector emitter voltage, VCEX 1500V
  • Emitter base voltage, VEBO 5V
  • Continuous collector current, IC 2.5A
  • Continuous base current, IB 2.0A
  • Continuous emitter current, IE 4.5A
  • Total power dissipation (TC = +25°C), PD 65W
    Derate above 25°C 0.65W/°C
  • Operating junction temperature range, TJ --65° to +125°C
  • Storage temperature range, Tstg --65° to +125°C
  • Maximum thermal resistance, junction--to--case, RthJC 1.54°C/W
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