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NTE2397 MOSFET-N-Channel High-Speed Switch

Model:

NTE2397

 | Catalog #: 55052917
Price:
$6.68
$6.68
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Product Summary

The NTE2397 is an MOSFET N-channel, enhancement mode high-speed switch.

  • Continuous drain current (VGS = 10V), ID:
    TC = +25°C: 10A
    TC = +100°C: 6.3A
  • Pulsed drain current*, IDM: 40A
  • Power dissipation (TC = +25°C), PD: 125W
    Derate Linearly Above 25°C: 1.0W/°C
  • Gate--to--source voltage, VGS: ±20V
  • Single pulse avalanche energy**, EAS: 520mJ
  • Avalanche current*, IAR: 10A
  • Repetitive avalanche energy*, EAR: 13mJ
  • Peak diode recovery dv/dt***, dv/dt: 4V/ns
  • Operating junction temperature range, TJ: --55° to +150°C
  • Storage Temperature Range, Tstg: --55° to +150°C
  • Lead temperature (during soldering, 1.6mm from case for 10sec), TL: +300°C
  • Mounting torque (6--32 or M3 screw): 10 lbf

  • in (1.1N
  • m)
  • Thermal resistance, junction--to--case, RthJC: 1.0°C/W
  • Thermal resistance, junction--to--ambient, RthJA: 62°C/W
  • Typical thermal resistance, case--to--sink (flat, greased surface), RthCS: 0.5°C/W
Pricing and availability: Please note that all prices are subject to change without prior notice. Prices advertised on this site are for online orders only. Prices on some items may differ from those advertised in RadioShack stores. All merchandise may not be available at all stores, and all stores may not participate in all sales promotions. We recommend you contact the store to confirm product availability and price.

Disclaimer: * Repetitive rating; pulse width limited by maximum junction temperature.
** VDD = 50V, starting TJ = +25°C, L = 9.1μH, RG = 25Ω, IAS = 10A
*** ISD ≤ 10A, di/dt ≤ 120A/μs, VDD ≤ V(BR)DSS, TJ ≤ +150°C

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