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The NTE2390 is an N--channel enhancement mode power MOSFET in a TO220-type package designed for low-voltage, high-speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon gate for fast switching speeds
IDSS, VDC(on), VGS(th) and SOA specified at elevated temperatures
Rugged -- SOA is power dissipation limited
Source--to--drain diode characterized for use with inductive loads
Drain source voltage, VDSS: 60V
Drain gate voltage (RGS = 1MΩ), VDGR: 60V
Gate source voltage, VGS: &plusnm;20V
Drain current, ID Continuous: 12A Pulsed: 30A
Total power dissipation (TC = +25°C), PD: 75W Derate Above 25°C: 0.6W/°C
Operating junction temperature range, TJ: --65° to +150°C
Storage temperature range, Tstg: --65° to +150°C
Maximum thermal resistance, junction--to--case, RthJC: 1.67°C/W
Maximum thermal resistance, junction--to--ambient, RthJA: 30°C/W
Maximum lead temperature (during soldering), TL: +275°C
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