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NTE2390 MOSFET N-Channel 60V High-Speed Switch

Model:

NTE2390

 | Catalog #: 55052914
Price:
$3.80
$3.80
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Product Summary

The NTE2390 is an N--channel enhancement mode power MOSFET in a TO220-type package designed for low-voltage, high-speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon gate for fast switching speeds
  • IDSS, VDC(on), VGS(th) and SOA specified at elevated temperatures
  • Rugged -- SOA is power dissipation limited
  • Source--to--drain diode characterized for use with inductive loads
  • Drain source voltage, VDSS: 60V
  • Drain gate voltage (RGS = 1MΩ), VDGR: 60V
  • Gate source voltage, VGS: &plusnm;20V
  • Drain current, ID
    Continuous: 12A
    Pulsed: 30A
  • Total power dissipation (TC = +25°C), PD: 75W
    Derate Above 25°C: 0.6W/°C
  • Operating junction temperature range, TJ: --65° to +150°C
  • Storage temperature range, Tstg: --65° to +150°C
  • Maximum thermal resistance, junction--to--case, RthJC: 1.67°C/W
  • Maximum thermal resistance, junction--to--ambient, RthJA: 30°C/W
  • Maximum lead temperature (during soldering), TL: +275°C
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