Thank you for visiting RadioShack. If you need assistance with shopping on our site, please call us at 800-843-7422 and a customer care representative will be happy to assist you. Please inform the Customer Service representative that you require assistance.
The NTE2390 is an N--channel enhancement mode power MOSFET in a TO220-type package designed for low-voltage, high-speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon gate for fast switching speeds
IDSS, VDC(on), VGS(th) and SOA specified at elevated temperatures
Rugged -- SOA is power dissipation limited
Source--to--drain diode characterized for use with inductive loads
Drain source voltage, VDSS: 60V
Drain gate voltage (RGS = 1MΩ), VDGR: 60V
Gate source voltage, VGS: ±20V
Drain current, ID Continuous: 12A Pulsed: 30A
Total power dissipation (TC = +25°C), PD: 75W Derate Above 25°C: 0.6W/°C
Operating junction temperature range, TJ: --65° to +150°C
Storage temperature range, Tstg: --65° to +150°C
Maximum thermal resistance, junction--to--case, RthJC: 1.67°C/W
Maximum thermal resistance, junction--to--ambient, RthJA: 30°C/W
Maximum lead temperature (during soldering), TL: +275°C
Pricing and availability: Please note that all prices are subject to change without prior notice. Prices advertised on this site are for online orders only. Prices on some items may differ from those advertised in RadioShack stores. All merchandise may not be available at all stores, and all stores may not participate in all sales promotions. We recommend you contact the store to confirm product availability and price.