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NTE102 PNP Germanium Transistor

Model:

NTE102

 | Catalog #: 55054132
Price:
$7.62
$7.62
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Product Summary

For mediumspeed saturated switching applications.

The NTE102 (PNP) is a Germanium transistor designed for medium--speed saturated switching applications.

  • Low collector--emitter saturation: voltage VCE(sat) =200mV Max @ IC=24mA
  • High emitter--base breakdown voltage: V(BR)EBO = 12V Min @ IE=20μA
  • Collector--base voltage, VCBO 25V
  • Collector--emitter voltage, VCES - 24V
  • Emitter--base voltage, VEBO - 12V
  • Continuous collector current, Ic - 150mA
  • Emitter current, IE - 100mA
  • Total device dissipation (TA = +25°C), PD - 150mW
    Derate above +25° 2mW/°C
  • Total device dissipation (TC = +25°C), PD - 300mW
    Derate above +25° 4mW/°C
  • Operating junction temperature range, TJ - --65° to +100°C
  • Storage junction temperature range, Tstg - --65° to +100°C
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