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The NTE4023B (14−Lead DIP) and NTE4023BT (SOIC−14) are triple 3−input NAND gate devices constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired.
Supply voltage range: 3V to 18V
All outputs buffered
Capable of driving 2 low−power TTL loads or one low−power Schottky TTL load over the rated temps
Double diode protection on all inputs
DC supply voltage, VDD −0.5 to +18.0V
Input Voltage (DC or transient), Vin −0.5 to VDD to +0.5V
Output Voltage (DC or transient), Vout −0.5 to VDD to +0.5V
Input current (DC or transient, per pin), Iin &plusnm;10mA
Output current (DC or transient, per pin), Iout &plusnm;10mA
Power Dissipation (Per Package), PD 500mW
Temperature Derating (from +65° to +125°C) −7.0mW/°C
Storage Temperature, Tstg −65° to +150°C
Lead Temperature (During Soldering, 8sec max), +260°C
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