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The NTE5498 and NTE5499 silicon-controlled rectifiers are high performance, glass passivated PNPN devices in TO220 type packages. They are designed for general purpose, high current applications
where moderate gate sensitivity is required.
IGT = 10mA
RMS on−state current (all conduction angles, TC = +85°C): 12A
Average on−state current (half cycle, 180° conduction angle, TC = +85°C): 7.6A
Nonrepetitive on−state current (half cycle, 60Hz): 132A
Nonrepetitive on−state current (half cycle, 50Hz): 120A
Peak gate current (10µs max): 4A
Peak gate dissipation (10µs max): 10W
Average gate dissipation (20ms max): 1W
Operating junction temperature range: -40° to 125°C
Storage temperature range: -40° to 125°C
Thermal resistance, junction--to--case: 3K/W
Thermal resistance, junction--to--ambient: 60K/W
Lead temperature (during soldering, 1.6mm from case, 10 sec. max): 250°C
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