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The NTE5452 through NTE5458 are sensitive gate, 4-amp silicon-controlled rectifiers in TO202 type packages which are designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be switched from off−state to conduction by a current pulse applied to the gate terminal. They are designed for control applications in lighting, heating, cooling, and static-switching relays.
IGT = 200uA
Repetitive peak reverse voltage (Tc = +100°C): 300V
Repetitive peak off--state voltage (Tc = +100°C): 300V
RMS on--state current: 4A
Peak surge (nonrepetitive) on−state current (one cycle at 50 or 60Hz): 20A
Peak gate-trigger current: 1A
Average gate power dissipation: 200mW
Operating temperature range: -40° to 100°C
Storage temperature range: -40° to 150°C
Thermal resistance, junction--to--case: 5°C/W
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