NTE NTE5403 Silicon-controlled Rectifier 150VRM 0.8A

The NTE5400 through NTE5406 sensitive gate silicon-controlled rectifier semiconductors are half-wave, unidirectional gate-controlled rectifiers (SCR−thyristor). They are rated at 0.8 amps RMS maximum on−state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 milliamp holding current and 8 amp surge capabilities. Available in a TO92 plastic package, these devices feature excellent environmental stress and temperature cycling characteristics. Coupled with their small size and electrical performance, they lend themselves to various types of control functions encountered with sensors, motors, lamps, relays, counters, triggers, etc.

• IGT = 200uA
• Repetitive peak reverse voltage (gate open Tc = +100°C): 150V
• Repetitive peak off--state voltage (gate open Tc = +100°C): 150V
• RMS on--state current: 0.8A
• Peak surge (nonrepetitive) on−state current (one cycle at 50 or 60Hz): 8A
• Peak gate trigger current (3µs max): 500mA
• Average gate power dissipation: 200mW
• Operating temperature range: -40° to 100°C
• Storage temperature range: -40° to 150°C
• Typical thermal resistance, junction--to--case: 5°C/W
• Thermal resistance, junction--to--ambient: 200°C/W

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