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The NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in a 16−lead DIP type package. They are comprised of seven silicon NPN Darlington pairs on a common, monolithic substrate. All units have open−collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungsten filament lamps. The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs, particularly those beyond the capabilities of standard logic buffers.
Output voltage: 50V
Input voltage: 30V
Continuous collector current: 500mA
Continuous input current: 25mA
Power dissipation (total): 2W
Operating ambient temperature range: -20° to 85°C
Storage temperature range: -55° to 150°C
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