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The NTE5408 sensitive gate silicon-controlled rectifier is designed to be driven directly with IC and MOS devices. This device features proprietary void−free, glass−passivated chips and is hermetically
sealed in a TO5 type package. The rectifier is a reverse−blocking triode thyristor and may be switched from off−state to conduction by a current pulse applied to the gate terminal. The NTE5408 is designed
for control applications in lighting, heating, cooling, and static switching relays.
IGT = 1mA
Repetitive peak reverse voltage (gate open Tc = +100°C): 200V
Repetitive peak off--state voltage (gate open Tc = +100°C): 200V
RMS on--state current (Tc = +75°C, 180° conduction angle): 4A
Peak surge (nonrepetitive) on−state current (one cycle at 50 or 60Hz): 40A
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