• Model: NTE5679
  • Catalog #: 55053097

NTE5679 TRIAC-600VRM 35A

Details

$33.74

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(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls and static switching relays. The triggering signal is normally applied between the gate and MT1.
  • Repetitive peak blocking voltage*, VDRM: 600V
  • RMS on−state current (conduction angle of 360°, TC = 0° to +125°C), IT(RMS): 40A
  • Peak off−state current (VDRM = 600V, gate open*), IDRM
    TC = +25°C: 200mA
    TC = +125°C: 5mA
  • Peak one−cycle surge current, ITSM
    50Hz: 335A
    60Hz:400A
  • Non−repetitive RMS surge on−state current for fusing (IGT = 500mA, 8.3ms), I2t: 664A2sec
  • Maximum DC gate trigger current (VD = 12V, Quad I, II, III), IGT: 100mA
  • Maximum DC gate trigger voltage (VD = 12V, Quad I, II, III*), VGT
  • TC = +25°C: 2.5V
    TC = +125°C: 0.2V
  • Peak on−state voltage (IT(RMS) = 40A, TC = +25°C*), VTM: 1.8V
  • DC holding current (*gate Open***), IH: 120mA
  • Peak gate trigger current (pulse width ≤ 10μs), IGTM: 4A
  • Peak gate power dissipation (pulse width ≤ 10μs), PGM: 40W
  • Average gate power dissipation, PG(AV): 800mW
  • Minimum critical rate of rise of off−state voltage (VDRM = 600V, gate open*), dv/dt
  • TC = +100°C: 375V/μs
    TC = +125°C: 250V/μs
  • Minimum critical rate of rise of commutation voltage*, dv/dt(c)
  • (VDRM = 600V, IT(RMS) = 40A, commutating di/dt = 21.6A/msec, gate unenergized) 4V/μs
  • Maximum rate of change of on−state current (IGT = 200mA, rise time = 0.1μs), di/dt 150A/μs
  • Maximum gate controlled turn−on time (IGT = 500mA, rise time = 0.1μs), tgt: 5μs
  • Operating temperature range, TJ: 0° to +125°C
  • Storage temperature range, Tstg: −20° to +125°C
*For either polarity of MT2 with reference to MT1 terminal. **For either polarity of gate voltage (VGT) with reference to MT1 terminal. ***Initial On−State Current = 400mA (DC).
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Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Power Reviews

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.75

Package Length

6.25

Package Width

3.70

General

Model

NTE5679

Product Type

Triacs

Identification

Manufacturer Part Number

NTE5679

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Operating Temperature UOM

° F

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Power Features

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Summary

The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls and static switching relays. The triggering signal is normally applied between the gate and MT1.
  • Repetitive peak blocking voltage*, VDRM: 600V
  • RMS on−state current (conduction angle of 360°, TC = 0° to +125°C), IT(RMS): 40A
  • Peak off−state current (VDRM = 600V, gate open*), IDRM
    TC = +25°C: 200mA
    TC = +125°C: 5mA
  • Peak one−cycle surge current, ITSM
    50Hz: 335A
    60Hz:400A
  • Non−repetitive RMS surge on−state current for fusing (IGT = 500mA, 8.3ms), I2t: 664A2sec
  • Maximum DC gate trigger current (VD = 12V, Quad I, II, III), IGT: 100mA
  • Maximum DC gate trigger voltage (VD = 12V, Quad I, II, III*), VGT
  • TC = +25°C: 2.5V
    TC = +125°C: 0.2V
  • Peak on−state voltage (IT(RMS) = 40A, TC = +25°C*), VTM: 1.8V
  • DC holding current (*gate Open***), IH: 120mA
  • Peak gate trigger current (pulse width ≤ 10μs), IGTM: 4A
  • Peak gate power dissipation (pulse width ≤ 10μs), PGM: 40W
  • Average gate power dissipation, PG(AV): 800mW
  • Minimum critical rate of rise of off−state voltage (VDRM = 600V, gate open*), dv/dt
  • TC = +100°C: 375V/μs
    TC = +125°C: 250V/μs
  • Minimum critical rate of rise of commutation voltage*, dv/dt(c)
  • (VDRM = 600V, IT(RMS) = 40A, commutating di/dt = 21.6A/msec, gate unenergized) 4V/μs
  • Maximum rate of change of on−state current (IGT = 200mA, rise time = 0.1μs), di/dt 150A/μs
  • Maximum gate controlled turn−on time (IGT = 500mA, rise time = 0.1μs), tgt: 5μs
  • Operating temperature range, TJ: 0° to +125°C
  • Storage temperature range, Tstg: −20° to +125°C

Tech Specs

The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls and static switching relays. The triggering signal is normally applied between the gate and MT1.

Reviews