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  • Model: NTE2900
  • Catalog #: 55052947

NTE2900 MOSFET N-Channel Enhancement Mode High-Speed Switch

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$1.83 Reg $2.61

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(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE2900 is a MOSFET N-channel enhancement mode 250V, ID=14A, TO-220 case high-speed switching transistor.
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Absolute Maximum Ratings
    VGS = 10V, ID
    TC = +25°C: 14A
    TC = +100°C: 8.5A
  • IDM: 56A
  • TC = +25°C, PD: 125W
    Derate linearly above 25°C: 1.0W/°C
  • VGS: ±20
  • EAS (VDD = 25V, starting TJ = +25°C, L = 4.5mH, RG = 25Ω, IAS = 14A): 550mJ
  • IAR: 14A
  • ISD ≤ 14A, di/dt ≤ 150A/μs, VDD ≤ 250V, TJ ≤ +175°C dv/dt: 4.8V/ns
  • TJ: –55° to +175°C
  • Tstg: –55° to +175°C
  • During Soldering, 1.6mm from case for 10sec, TL: +300°C
  • RthJC: 1.0°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.10

Package Length

6.25

Package Width

3.70

General

Model

NTE2900

Product Type

MOSFET

Identification

Manufacturer Part Number

NTE2900

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Operating Temperature UOM

° F

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Power Features

Print
 

Summary

The NTE2900 is a MOSFET N-channel enhancement mode 250V, ID=14A, TO-220 case high-speed switching transistor.
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Absolute Maximum Ratings
    VGS = 10V, ID
    TC = +25°C: 14A
    TC = +100°C: 8.5A
  • IDM: 56A
  • TC = +25°C, PD: 125W
    Derate linearly above 25°C: 1.0W/°C
  • VGS: ±20
  • EAS (VDD = 25V, starting TJ = +25°C, L = 4.5mH, RG = 25Ω, IAS = 14A): 550mJ
  • IAR: 14A
  • ISD ≤ 14A, di/dt ≤ 150A/μs, VDD ≤ 250V, TJ ≤ +175°C dv/dt: 4.8V/ns
  • TJ: –55° to +175°C
  • Tstg: –55° to +175°C
  • During Soldering, 1.6mm from case for 10sec, TL: +300°C
  • RthJC: 1.0°C/W
  • RthJA: 62°C/W
  • RthCS: 0.5°C/W

Tech Specs

The NTE2900 is a MOSFET N-channel enhancement mode 250V, ID=14A, TO-220 case high-speed switching transistor.

Reviews