• Model: NTE2383
  • Catalog #: 55052909

NTE2383 100V MOSFET Power P-Channel High-Speed Switch

Details

$10.75

In Stock

(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE2383 is a MOS power P–channel FET in a TO-220 package designed for high-voltage, high-speed power-switching applications such as switching regulators, converters, solenoids and relay drivers.
  • Lower RDS (on)
  • Improved inductive ruggedness
  • Fast switching times
  • Rugged polysilicon gate-cell structure
  • Lower input capacitance
  • Extended safe operating area
  • Improved high-temperature reliability
  • Drain source voltage*, VDSS: 100V
  • Drain gate voltage RGS = 1MΩ*, VDGR: 100V
  • Gate source voltage, VGS: ±20V
  • Continuous drain current, ID:
    TC = +25°C: 10.5A
    TC = +100°C: 7.5A
  • Drain current, pulsed*** - IDM: 42A
  • Gate current, pulsed, IGM: ±1.5A
  • Single pulsed avalanche energy**** - EAS: 510mJ
  • Avalanche current, IAS: 10.5A
  • Total power dissipation (TC = +25°C), PD: 75W
    Derate above 25°C: 0.6W/°C
  • Operating junction temperature range, Topr: –55° to +150°C
  • Storage temperature range, Tstg: –55° to +150°C
  • Thermal resistance, junction–to–ambient, RthJA: 62.5°C/W
  • Thermal resistance, junction–to–case, RthJC: 1.67°C/W
  • Thermal resistance, case–to–sink***** - RthCS: 0.5°C/W
  • Maximum lead temperature (during soldering, 1/8” from case, 5sec), TL: +300°C
* TJ = +25° to +150°C
** Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%
*** Repetitive rating: Pulse width limited by max. junction temperature.
**** L = 8.5mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C
***** Mounting surface flat, smooth, and greased.
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.15

Package Length

6.25

Package Width

3.70

General

Model

NTE2383

Product Type

MOSFET

Identification

Manufacturer Part Number

NTE2383

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Operating Temperature UOM

° F

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Power Features

Print
 

Summary

The NTE2383 is a MOS power P–channel FET in a TO-220 package designed for high-voltage, high-speed power-switching applications such as switching regulators, converters, solenoids and relay drivers.
  • Lower RDS (on)
  • Improved inductive ruggedness
  • Fast switching times
  • Rugged polysilicon gate-cell structure
  • Lower input capacitance
  • Extended safe operating area
  • Improved high-temperature reliability
  • Drain source voltage*, VDSS: 100V
  • Drain gate voltage RGS = 1MΩ*, VDGR: 100V
  • Gate source voltage, VGS: ±20V
  • Continuous drain current, ID:
    TC = +25°C: 10.5A
    TC = +100°C: 7.5A
  • Drain current, pulsed*** - IDM: 42A
  • Gate current, pulsed, IGM: ±1.5A
  • Single pulsed avalanche energy**** - EAS: 510mJ
  • Avalanche current, IAS: 10.5A
  • Total power dissipation (TC = +25°C), PD: 75W
    Derate above 25°C: 0.6W/°C
  • Operating junction temperature range, Topr: –55° to +150°C
  • Storage temperature range, Tstg: –55° to +150°C
  • Thermal resistance, junction–to–ambient, RthJA: 62.5°C/W
  • Thermal resistance, junction–to–case, RthJC: 1.67°C/W
  • Thermal resistance, case–to–sink***** - RthCS: 0.5°C/W
  • Maximum lead temperature (during soldering, 1/8” from case, 5sec), TL: +300°C

Tech Specs

The NTE2383 is a MOS power P–channel FET in a TO-220 package designed for high-voltage, high-speed power-switching applications such as switching regulators, converters, solenoids and relay drivers.

Reviews