• Model: NTE108
  • Catalog #: 55051968

NTE108 - T-NPN SI High-Frequency IF-Amp 30V

Details

$1.89

In Stock

(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF-amplifiers and non−saturating circuits with rise and fall times less than 2.5ns.
  • Collector−emitter voltage: 15V
  • Collector−base voltage: 30V
  • Emitter−base voltage: 3V
  • Continuous collector current: 50mA
  • Operating junction temperature range: -55°C to 150°C
  • Storage temperature range: -55°C to 150°C
  • Thermal resistance (junction−to−case): 83.3°C/W
  • Thermal Resistance (junction−to−ambient): 200°C/W
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.10

Package Length

6.25

Package Width

3.70

General

Body Material

Silicone

Model

NTE108

Product Type

HF IF amplifiers

Identification

Manufacturer Part Number

NTE108

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Max Operating Temperature

150.00

Min Operating Temperature

-55.00

Operating Temperature UOM

° C

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Number per pack

1.00

Power Features

Voltage Required

30V

Print
 

Summary

The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF-amplifiers and non−saturating circuits with rise and fall times less than 2.5ns.
  • Collector−emitter voltage: 15V
  • Collector−base voltage: 30V
  • Emitter−base voltage: 3V
  • Continuous collector current: 50mA
  • Operating junction temperature range: -55°C to 150°C
  • Storage temperature range: -55°C to 150°C
  • Thermal resistance (junction−to−case): 83.3°C/W
  • Thermal Resistance (junction−to−ambient): 200°C/W

Tech Specs

The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF-amplifiers and non−saturating circuits with rise and fall times less than 2.5ns.

Reviews

$ $1.89 In Stock