• Model: NTE4015B
  • Catalog #: 55050779

NTE NTE4015B IC-CMOS Dual 4−Bit Static Shift Register

Details

$4.08

In Stock

(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE4015B (16−Lead DIP) and NTE4015BT (SOIC−16) are dual 4−bit static shift registers constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices consist of two identical, independent 4−state serial−input/parallel−output registers. Each register has independent clock and reset inputs with a single serial data input. The register states are type D master−slave flip−flops. Data is shifted from one stage to the next during the positive−going clock transition. Each register can be cleared when a high level is applied on the reset line. These complementary MOS shift registers find primary use in buffer storage and serial−to−parallel conversion where low-power dissipation and/or noise-immunity is desired.
  • Diode protection on all inputs
  • Supply voltage range: 3VDC to 18VDC
  • Logic edge−clocked flip−flop design
  • Logic state is retained indefinitely with clock level either high or low
  • Information is transferred to the output only on the positive going edge of the clock pulse
  • Capable of driving two low−power TTL loads or one low−power Schottky TTL load over the rated temp
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.50

Package Length

6.25

Package Width

3.70

General

Model

NTE4015B

Product Type

Registers and buffers

Identification

Manufacturer Part Number

NTE4015B

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Operating Temperature UOM

° F

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Power Features

Print
 

Summary

The NTE4015B (16−Lead DIP) and NTE4015BT (SOIC−16) are dual 4−bit static shift registers constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices consist of two identical, independent 4−state serial−input/parallel−output registers. Each register has independent clock and reset inputs with a single serial data input. The register states are type D master−slave flip−flops. Data is shifted from one stage to the next during the positive−going clock transition. Each register can be cleared when a high level is applied on the reset line. These complementary MOS shift registers find primary use in buffer storage and serial−to−parallel conversion where low-power dissipation and/or noise-immunity is desired.
  • Diode protection on all inputs
  • Supply voltage range: 3VDC to 18VDC
  • Logic edge−clocked flip−flop design
  • Logic state is retained indefinitely with clock level either high or low
  • Information is transferred to the output only on the positive going edge of the clock pulse
  • Capable of driving two low−power TTL loads or one low−power Schottky TTL load over the rated temp

Tech Specs

The NTE4015B (16−Lead DIP) and NTE4015BT (SOIC−16) are dual 4−bit static shift registers constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices consist of two identical, independent 4−state serial−input/parallel−output registers. Each register has independent clock and reset inputs with a single serial data input. The register states are type D master−slave flip−flops. Data is shifted from one stage to the next during the positive−going clock transition. Each register can be cleared when a high level is applied on the reset line. These complementary MOS shift registers find primary use in buffer storage and serial−to−parallel conversion where low-power dissipation and/or noise-immunity is desired.

Reviews