• Model: NTE274
  • Catalog #: 55052692

NTE NTE274 T-NPN Darlington Transistor HFE3000

Details

$4.00

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(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications.
  • IC = 4A
  • TO-66
  • High DC current gain
  • Monolithic construction with built–in base-emitter shunt resistors
  • Collector–base voltage: 80V
  • Collector–emitter voltage: 80V
  • Emitter-base voltage: 5V
  • Collector current (continuous): 4A
  • Collector current (peak): 8A
  • Base current: 80mA
  • Total power dissipation (Tc = +25°C): 50W
  • Operating junction temperature range: -65° to 150°C
  • Storage temperature range: -65° to 200°C
  • Thermal resistance, junction–to–case: 62.5°C/W
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.75

Package Length

6.25

Package Width

3.70

General

Model

NTE274

Product Type

Darlington

Identification

Manufacturer Part Number

NTE274

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Operating Temperature UOM

° F

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Number per pack

1.00

Power Features

Print
 

Summary

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications.
  • IC = 4A
  • TO-66
  • High DC current gain
  • Monolithic construction with built–in base-emitter shunt resistors
  • Collector–base voltage: 80V
  • Collector–emitter voltage: 80V
  • Emitter-base voltage: 5V
  • Collector current (continuous): 4A
  • Collector current (peak): 8A
  • Base current: 80mA
  • Total power dissipation (Tc = +25°C): 50W
  • Operating junction temperature range: -65° to 150°C
  • Storage temperature range: -65° to 200°C
  • Thermal resistance, junction–to–case: 62.5°C/W

Tech Specs

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications.

Reviews