• Model: NTE2013
  • Catalog #: 55052578

NTE NTE2013 Integrated Circuit Darlington Array/Driver

Details

$4.12

In Stock

(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in a 16−lead DIP type package. They are comprised of seven silicon NPN Darlington pairs on a common, monolithic substrate. All units have open−collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungsten filament lamps. The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs, particularly those beyond the capabilities of standard logic buffers.
  • Output voltage: 50V
  • Input voltage: 30V
  • Continuous collector current: 500mA
  • Continuous input current: 25mA
  • Power dissipation (total): 2W
  • Operating ambient temperature range: -20° to 85°C
  • Storage temperature range: -55° to 150°C
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Custom Product Attributes

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.50

Package Length

6.25

Package Width

3.70

General

Model

NTE2013

Product Type

Transistor arrays

Identification

Manufacturer Part Number

NTE2013

Subtitle

7−Channel

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Max Operating Temperature

85.00

Min Operating Temperature

-20.00

Operating Temperature UOM

° C

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Number per pack

1.00

Power Features

Print
 

Summary

The NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in a 16−lead DIP type package. They are comprised of seven silicon NPN Darlington pairs on a common, monolithic substrate. All units have open−collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungsten filament lamps. The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs, particularly those beyond the capabilities of standard logic buffers.
  • Output voltage: 50V
  • Input voltage: 30V
  • Continuous collector current: 500mA
  • Continuous input current: 25mA
  • Power dissipation (total): 2W
  • Operating ambient temperature range: -20° to 85°C
  • Storage temperature range: -55° to 150°C

Tech Specs

The NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in a 16−lead DIP type package. They are comprised of seven silicon NPN Darlington pairs on a common, monolithic substrate. All units have open−collector outputs and integral diodes for inductive load transient suppression. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungsten filament lamps. The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs, particularly those beyond the capabilities of standard logic buffers.

Reviews

$ $4.12 In Stock