• Model: NTE2410
  • Catalog #: 55052624

High-voltage Surface-mount Silicon NPN Transistor

Details

$2.30

In Stock

(Online Only)

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Additional Information

  • Summary
  • Tech Specs
  • Reviews
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface-mount case designed for use in high-voltage applications. It is complementary to NTE2411 (PNP).
  • Collector–emitter voltage: 160V
  • Collector–base voltage: 180V
  • Emitter–base voltage: 6V
  • Continuous collector current: 600mA
  • Total power dissipation on FR–5 PCB: 225mW (derate above 25°C: 1.8mW/°C)
  • Thermal resistance, junction to ambient on FR-5 PCB: 556°C/mW
  • Total power dissipation on alumina substrate: 300mW (derate above 25°C: 2.4mW/°C)
  • Thermal resistance, junction to ambient on alumina substrate: 417°C/mW
  • Operating junction temperature range: –55° to 150°C
  • Storage temperature range: –55° to 150°C
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Shipping

Ships in 1-2 Business Days

Presentation Attributes

Storefront Attributes

Search Refinements

Shop Runner

Battery Features

Capacity UOM

mAh

Rechargeable

No

Cleansing

Dimensions

Fulfillment

Package Height

0.50

Package Length

6.25

Package Width

3.70

General

Model

NTE2410

Product Type

High-voltage and power

Identification

Manufacturer Part Number

NTE2410

Surcharge

Legal

Merchandising

Inputs & Outputs

Miscellaneous Features

Max Operating Temperature

150.00

Min Operating Temperature

-55.00

Operating Temperature UOM

° C

Supported Languages

English

Power Features

Docking station

No

Promo

Retail

Price

Remote Control Features

Warranty

0.00

0.00

Available RadioShack Service Plan

No

Warranty Labor UOM

days

Warranty Parts UOM

days

Root

Additional Features

Water-Resistant or Waterproofness Standard

No

Miscellaneous Features

Power Features

Print
 

Summary

The NTE2410 is a silicon NPN transistor in an SOT–23 type surface-mount case designed for use in high-voltage applications. It is complementary to NTE2411 (PNP).
  • Collector–emitter voltage: 160V
  • Collector–base voltage: 180V
  • Emitter–base voltage: 6V
  • Continuous collector current: 600mA
  • Total power dissipation on FR–5 PCB: 225mW (derate above 25°C: 1.8mW/°C)
  • Thermal resistance, junction to ambient on FR-5 PCB: 556°C/mW
  • Total power dissipation on alumina substrate: 300mW (derate above 25°C: 2.4mW/°C)
  • Thermal resistance, junction to ambient on alumina substrate: 417°C/mW
  • Operating junction temperature range: –55° to 150°C
  • Storage temperature range: –55° to 150°C

Tech Specs

The NTE2410 is a silicon NPN transistor in an SOT–23 type surface-mount case designed for use in high-voltage applications. It is complementary to NTE2411 (PNP).

Reviews